Scientists at Forschungszentrum Jülich have fabricated a new type of transistor from a germanium–tin alloy that has several advantages over conventional switching elements. Charge carriers can move ...

An important breakthrough has been reached in the development of energy-efficient electronic circuits using transistors based on germanium. A team of scientists from the Nanoelectronic Materials ...

Before this work it was not possible to perform quantum calculations using only transistors. Other elements were needed and this provided a limitation for upscaling. This work shows a single ...

A Si–Gr–Ge transistor has been demonstrated. The Schottky emitter provides an emitter charging time of ~118 ps with a current of 692 A cm−2 and a capacitance of 41 nF cm−2, which is expected to ...

It might look like something out of Tron, but you’re actually looking at a new type of transistor made out of germanium—which is four times faster than those currently in use. The new transistor, ...

NASA’s new silicon-germanium (SiGe) electronics can operate at -180°C and withstand 5 Mrad radiation, enabling autonomous exploration of Europa and other ocean worlds.

IIIF provides researchers rich metadata and media viewing options for comparison of works across cultural heritage collections. Visit the IIIF page to learn more. Two early transistors in a sample box ...

(Nanowerk News) Over the past 70 years, the number of transistors on a chip has doubled approximately every two years – according to Moore’s Law, which is still valid today. The circuits have become ...

A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology ...