We’re currently in the middle of a disruptive evolution in power electronics, driven by the growing availability of wide-bandgap semiconductors like gallium nitride (GaN) and silicon carbide (SiC).
WICHITA, KS, UNITED STATES, February 15, 2026 /EINPresswire.com/ -- Nitride Global, Inc. (NGI), a global leader in ...
The federal award enables the High Density Electronics Center to upgrade its equipment and capabilities while conferring status as a Power Packaging Center of Excellence.
India's Kaynes Semiconductor has aligned with a major anchor customer in the power domain, focusing on IGBT (Insulated-Gate Bipolar Transistor) and IPM (Intelligent Power Module) products for the ...
A team of researchers at the University of Minnesota has developed a next-generation transparent and efficient semiconductor material. This breakthrough could have enormous ramifications for improving ...
The facility plans to begin operations with an initial production capacity of 10,000 wafers per month, targeting an expansion to 50,000 wafers within two to three years. This initiative is part of a ...
EMI-resistant flow meters deliver stable, reliable performance for semiconductor, defense, industrial automation, and ...
The research team led by Dr. Jae Hwa Seo at Advanced Semiconductor Research Center of KERI has developed technology to evaluate radiation resistance and secure reliability of silicon carbide (SiC) ...
India Semiconductor Mission 2.0 must be understood for what it is: a 25-year national capability-building exercise, not a ...
The Union Cabinet on Thursday approved Rs 1.26 trillion worth of investments in three semiconductor plants, including a Tata group proposal to build the country’s first major chip fabrication facility ...