Texas Instruments Inc. (TI) has launched a new family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers. With this new family, ...

Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, introduced the industry’s first ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN) power transistors, making them safer and easier to utilize in high-value ...

BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...